description: the central semiconductor cmdd2004 is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a supermini? surface mount package, designed for applications requiring high voltage capability. marking code: c24 maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 240 v peak repetitive reverse voltage v rrm 300 v peak repetitive reverse current i o 200 ma continuous forward current i f 225 ma peak repetitive forward current i frm 625 ma forward surge current, tp=1 sec. i fsm 4000 ma forward surge current, tp=1 sec. i fsm 1000 ma power dissipation p d 250 mw operating and storage junction temperature t j ,t stg -65 to +175 c thermal resistance ja 600 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max unit bv r i r =100a 300 v i r v r =240v 100 na i r v r =240v, t a =150c 100 a v f i f =100ma 1.0 v c t v r =0, f=1 mhz 5.0 pf t rr i f =i r =30ma, rec. to 3.0ma, r l =100 ? 50 ns cmdd2004 supermini? surface mount high voltage switching diode central semiconductor corp. tm r4 (6-august 2007) sod-323 case
lead code: 1) cathode 2) anode marking code: c24 central semiconductor corp. tm sod-323 case - mechanical outline cmdd2004 supermini? surface mount high voltage switching diode r4 (6-august 2007)
|
